Method for making thin film transistor
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United States of America Patent
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Jul 19, 2016
Grant Date -
May 26, 2016
app pub date -
Jan 27, 2016
filing date -
Apr 16, 2013
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Abstract
A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, an insulating layer and a gate electrode. The drain electrode is spaced from the source electrode. The semiconductor layer is electrically connected to the source electrode and the drain electrode. The gate electrode is insulated with the source electrode, the drain electrode and the semiconductor layer by the insulating layer. The gate electrode, the source electrode, and the drain electrode comprise a plurality of first carbon nanotubes. The semiconductor layer comprises a plurality of second carbon nanotubes. A distribution density of the plurality of first carbon nanotubes is about 20 times as much as that of the plurality of second carbon nanotubes. A number of the plurality of second carbon nanotubes in 1 square micrometers is smaller than or equal to 1.
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