Method of stripping photoresist from Al bonding pads that prevents corrosion
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United States of America Patent
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Dec 28, 1999
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app pub date -
Jan 28, 1997
filing date -
Jan 28, 1997
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Abstract
The present invention provides a method of removing photoresist from a wafer surface having a bonding pad using a three step clean composed of (1) a wet cleaning the substrate, (2) a F-containing gas high temperature plasma treatment which prevents the corrosion of aluminum contact pad, and (3) completely striping the photoresist strip using an O.sub.2 dry ash. The invention eliminates metal bonding pad corrosion and the completely removes residual photoresist from keyholes.
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