High reliability polysilicon components

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11916067
SERIAL NO

17684774

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present disclosure introduces, among other things, an electronic device, e.g. an integrated circuit (IC). The IC includes a semiconductor substrate comprising a first doped layer of a first conductivity type. A second doped layer of the first conductivity type is located within the first doped layer. The second doped layer has first and second layer portions with a greater dopant concentration than the first doped layer, with the first layer portion being spaced apart from the second layer portion laterally with respect to a surface of the substrate. The IC further includes a lightly doped portion of the first doped layer, the lightly doped portion being located between the first and second layer portions. A dielectric isolation structure is located between the first and second layer portions, and directly contacts the lightly doped portion.

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Patent Owner(s)

  • TEXAS INSTRUMENTS INCORPORATED

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arshad, Shariq Allen, US 9 16
Chatterjee, Tathagata Allen, US 36 239
Davis, Jonathan Philip Allen, US 14 54
Edwards, Henry Litzmann Garland, US 109 447
Higgins, Robert M Plano, US 18 1096
Wang, Li Plano, US 845 5936
Wu, Xiaoju Dallas, US 54 251

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