Importance

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Abstract

Provided is a method of manufacturing a silicon carbide epitaxial wafer appropriate for suppressing an occurrence of a triangular defect. A method of manufacturing a silicon carbide epitaxial wafer includes: an etching process of etching a surface of a silicon carbide substrate at a first temperature using etching gas including H₂; a process of flattening processing of flattening the surface etched in the etching process, at a second temperature using gas including H₂ gas, first Si supply gas, and first C supply gas; and an epitaxial layer growth process of performing an epitaxial growth on the surface flattened in the process of flattening processing, at a third temperature using gas including second Si supply gas and second C supply gas, wherein the first temperature T₁, the second temperature T₂, and the third temperature T₃ satisfy T₁>T₂>T₃.

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First Claim