Semiconductor device and method for fabricating the same

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United States of America Patent

PATENT NO 11935934
APP PUB NO 20220352331A1
SERIAL NO

17502737

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Abstract

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The present invention provides a semiconductor device including a capping layer of a reduced thickness and capable of preventing regrowth of an interface layer caused by oxygen injection, and a method for fabricating the same. According to an embodiment of the present invention, the semiconductor device comprises: an interface layer on a substrate; a high-k layer on the interface layer; a gate electrode on the high-k layer; and a capping layer including a first oxygen barrier layer and a second oxygen barrier layer on the gate electrode.

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Patent Owner(s)

  • SK HYNIX INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yoon, Young Gwang Gyeonggi-do, KR 19 3

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