Scatterometry with grating to observe resist removal rate during etch
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United States of America Patent
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Jan 3, 2006
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app pub date -
Mar 5, 2003
filing date -
Mar 5, 2003
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Abstract
Disclosed are a system and method for monitoring a patterned photoresist clad-wafer structure undergoing an etch process. The system includes a semiconductor wafer structure comprising a substrate, one or more intermediate layers overlying the substrate, and a first patterned photoresist layer overlying the intermediate layers, the semiconductor wafer structure being etched through one or more openings in the photoresist layer; a wafer-etch photoresist monitoring system programmed to obtain data relating to the photoresist layer as the etch process progresses; a pattern-specific grating aligned with the wafer structure and employed in conjunction with the monitoring system, the grating having at least one of a pitch and a critical dimension identical to the first patterned photoresist layer; and a wafer processing controller operatively connected to the monitoring system and adapted to receive data from the monitoring system in order to determine adjustments to a subsequent wafer clean process.
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Patent Owner(s)
- ADVANCED MICRO DEVICES, INC.
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Labelle, Catherine B | San Jose, CA | 19 | 213 |
Lyons, Christopher F | Fremont, CA | 152 | 2997 |
Rangarajan, Bharath | Santa Clara, CA | 198 | 3050 |
Singh, Bhanwar | Morgan Hill, CA | 264 | 3908 |
Subramanian, Ramkumar | Sunnyvale, CA | 274 | 4112 |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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