Hard mask removal method

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United States of America Patent

PATENT NO 11854821
APP PUB NO 20210225657A1
SERIAL NO

17220595

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Abstract

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A method of removing a hard mask is provided. Gate stacks are patterned on a substrate, where the gate stacks include a polysilicon layer and the hard mask deposited over the polysilicon layer. A dielectric layer is deposited on the substrate and on the patterned gate stacks. A first portion of the dielectric layer is planarized by chemical mechanical polishing (CMP) to remove a topography of the dielectric layer. The hard mask and a second portion of the dielectric layer are removed by the CMP.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Ying-Tsung Hsinchu, TW 61 535
Hong, William Weilun Hsinchu, TW 29 47
Tu, Che-Hao Hsinchu, TW 17 69

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