Method of forming semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5926735
SERIAL NO

08802685

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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There is disclosed a manufacturing method of highly integrated circuits with thin-film transistors (TFTs) for use as peripheral driver circuitry in active-matrix liquid crystal display (LCD) panel with a pixel array each having a charge transfer control TFT, capable of facilitating formation of contact holes otherwise being difficult in cases where an anode oxide film is formed on gate electrodes of TFTs and lead wires both of which are made of anodizable metal, such as aluminum. The method includes execution of anodization while causing a resist mask to be disposed on part of the lead wire and electrode made of aluminum, thereby partly eliminating formation of the anode oxide film on the lead wire and electrode. At a later step of fabrication, each contact is formed by use of such portion that has no anode oxide film formed thereon. This may allow aluminum to be employed as lead wires while enabling easy fabrication of contacts therefor.

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Patent Owner(s)

  • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SHARP KABUSHIKI KAISHA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Awane, Katunobu Nara, JP 16 629
Goto, Yuugo Kanagawa, JP 126 5098
Hamada, Toshimasa Nara, JP 23 135
Teramoto, Satoshi Kanagawa, JP 312 11587
Yamaguchi, Naoaki Kanagawa, JP 65 4084
Yamamoto, Yoshitaka Nara, JP 110 3077
Yamazaki, Shunpei Tokyo, JP 7307 227749

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