Process for masking and removal of residue from complex shapes

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8518832
SERIAL NO

13169588

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A process is provided for etching a mask layer and removal of residue from a structure having an area sheltered from directional etching. The structure has a shape that forms a silhouette area obstructed from being etched by anisotropic bombardment originating from a first direction, and a mask formed over the mask layer over the structure; A first etch process removes at least a part of the mask layer and retains at least a part of mask layer in the sheltered area. A second etch process removes at least a part of the mask layer in the sheltered area by hydrogen based microwave plasma etching.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • WESTERN DIGITAL (FREMONT), LLC

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yan Fremont, US 825 9162
Huang, Yunhe Pleasanton, US 9 744
Lu, Ching-Huang Fremont, US 103 882
Xiang, Yang Fremont, US 50 298
Yang, Xiaoyu Union City, US 109 1246
Zeng, Xianzhong Fremont, US 17 1513
Zhang, Jinqiu Fremont, US 53 4014

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 Feb 27, 2025
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00