Method for fabricating device structures having a variation in electrical conductivity
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United States of America Patent
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Sep 14, 2010
Grant Date -
Aug 13, 2009
app pub date -
Feb 13, 2008
filing date -
Feb 13, 2008
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Abstract
A method for forming device structures having a variation in electrical conductivity includes forming a device structure and a radiation absorbing layer overlying the device structure. The radiation absorbing layer has a spatial variation and radiation absorbing characteristics, such that upon irradiating the device structure, the radiation absorbing layer attenuates the intensity of the radiation so that a variation in dopant activation takes place within the device structure. Accordingly, device structures are formed having a variation in electrical resistance independent of the physical size of the device structures.
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