Method of fabricating semiconductor devices with contact studs formed without major polishing defects
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United States of America Patent
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Nov 26, 2002
Grant Date -
Oct 31, 2002
app pub date -
Apr 30, 2001
filing date -
Apr 30, 2001
priority date (Note) -
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status (Latency Note)
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Abstract
In a semiconductor device, a contact stud (100) contacts a semiconductor substrate (10); the stud is embedded in an insulating structure with a first insulating layer (20) and a second insulating layer (20'). During manufacturing, (a) the first layer (20) is provided above the substrate (10); (b) a hole in the first layer (20) exposes a portion of the upper surface of the substrate to receive the stud; (c) a contact material (30, 40) is provided at the top of the resulting structure; (d) a first chemical-mechanical polishing (CMP) removes the contact material from the surface of the first layer (20) outside the hole; (e) residuals (50) of the contact material are cleaned away from the upper surface; (f) the second insulating layer (20') is provided at the surface of the resulting structure; (g) and further polishing is applied.
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