Memory with read circuit for current-to-voltage slope characteristic-based sensing and method

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United States of America Patent

PATENT NO 11380373
SERIAL NO

17317938

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Abstract

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Disclosed is a memory structure including an array of memory cells and a read circuit. The read circuit includes two registers configured to capture and store two different digital-to-analog converter (DAC) codes, which correspond to two different reference currents that approximate two different output currents generated on a bitline during consecutive single-ended current sensing processes directed to the same selected memory cell but using different input voltages. Optionally, the read circuit can also include a current-voltage (I-V) slope calculator, which uses the two different DAC codes to calculate an I-V slope characteristic of the selected memory cell, and a bit generator, which performs a comparison of the I-V slope characteristic and a reference I-V slope characteristic and based on results of the comparison, generates and outputs a bit with a logic value that represents the data storage state of the selected memory cell. Also disclosed is an associated method.

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Patent Owner(s)

  • GLOBALFOUNDRIES U.S. INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kirihata, Toshiaki Poughkeepsie, US 150 2341
Min, Byoung-Woon B Halfmoon, US 1 0
Nour, Mohamed A Ballston Spa, US 1 0
Paliwoda, Peter C Saratoga Springs, US 1 0

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