Semiconductor device

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United States of America Patent

PATENT NO 11935967
APP PUB NO 20210367082A1
SERIAL NO

17393452

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Abstract

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The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

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Patent Owner(s)

  • JAPAN DISPLAY INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hanyu, Yuichiro Minato-ku, JP 10 15
Sakai, Takeshi Minato-ku, JP 191 1490
Watabe, Masahiro Minato-ku, JP 45 687

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