Semiconductor memory device and manufacturing method of the semiconductor memory device

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United States of America Patent

PATENT NO 11411022
APP PUB NO 20210217769A1
SERIAL NO

16918445

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Abstract

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There are provided a semiconductor memory device and a manufacturing method thereof. The semiconductor memory device includes: a cell stack structure surrounding a first channel structure and a second channel structure; a first source select line overlapping with a first region of the cell stack structure and surrounding the first channel structure; and a second source select line overlapping with a second region of the cell stack structure and surrounding the second channel structure. Each of the first source select line and the second source select line includes a first select gate layer overlapping with the cell stack structure, a second select gate layer disposed between the first select gate layer and the cell stack structure, and a third select gate layer disposed between the first select gate layer and the second select gate layer.

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Patent Owner(s)

  • SK HYNIX INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Nam Jae Icheon-si, KR 172 596

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