Semiconductor device and method for fabricating the same
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United States of America Patent
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Jan 30, 2007
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N/A
app pub date -
Nov 9, 2004
filing date -
Apr 3, 2001
priority date (Note) -
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Abstract
A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.
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