Spin-orbit torque magnetization rotational element, spin-orbit torque magnetoresistance effect element, magnetic memory, and reservoir element

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United States of America Patent

PATENT NO 11832531
SERIAL NO

17296896

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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A spin-orbit torque magnetization rotational element includes: a first insulating layer with first and second openings; a first conductive portion formed inside the first opening; a second conductive portion formed inside the second opening; a spin-orbit torque wiring located in a first direction and extends in a second direction over the first and second conductive portions; and a first ferromagnetic layer located on the side opposite to the first insulating layer in the spin-orbit torque wiring, wherein the first conductive portion includes a first surface facing the spin-orbit torque wiring, a second surface facing the first surface and is located at a position farther from the spin-orbit torque wiring than the first surface, and a side surface connecting the first surface and the second surface, and the side surface includes a continuous major surface and a third surface inclined or curved and is discontinuous with respect to the major surface.

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Patent Owner(s)

Patent OwnerAddress
TDK CORPORATION3-9-1 SHIBAURA MINATO-KU TOKYO 108-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sasaki, Tomoyuki Tokyo, JP 234 1193
Shiokawa, Yohei Tokyo, JP 92 326

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