LDMOS device with integrated P-N junction diodes
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United States of America
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Mar 22, 2022
Grant Date -
Apr 30, 2020
app pub date -
Oct 25, 2019
filing date -
Oct 25, 2019
priority date (Note) -
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status (Latency Note)
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Abstract
A structural body made of semiconductor material includes an active area housing a drain region, a body region and a source region within the body region. An electrical-isolation trench extends in the structural body to surround the active area. A first PN-junction and a second PN-junction are integrated in the structural body between the active area and the trench, respectively located on opposite sides of the active area. The first and the second PN-junctions form a first diode and a second diode, with each diode having a respective cathode electrically coupled to the drain region of the MOSFET device and a respective anode electrically coupled to the source region of the MOSFET device.
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