Semiconductor storage device
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United States of America Patent
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-
Oct 21, 2003
Grant Date -
May 16, 2002
app pub date -
Dec 27, 2001
filing date -
Jan 13, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The upper electrode of a capacitor is constituted of laminated films which act to prevent hydrogen atoms from reaching the capacitor electrodes and degrading performance. In one example, a four layer upper electrode respectively act as a Schottky barrier layer, a hydrogen diffusion preventing layer, a reaction preventing layer, and an adsorption inhibiting layer. Therefore, the occurrence of a capacitance drop, imperfect insulation, and electrode peeling in the semiconductor device due to a reducing atmosphere can be prevented. In addition, the long-term reliability of the device can be improved.
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