Semiconductor device and a process for forming a protective insulating layer thereof
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United States of America Patent
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Nov 20, 2001
Issued Date -
N/A
app pub date -
Jan 11, 1999
filing date -
Sep 10, 1996
priority date (Note) -
Expired
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Abstract
A protective insulating film in a semiconductor device is formed in a multi-layer structure. A lower layer portion is constituted by an organic-silane-based silicon oxide film formed by a P-CVD process using organic silane and oxygen to improve step coverage. An upper layer portion is constituted by a silane-based silicon oxide film containing excess silicon in an amount greater than that in the stoichiometric composition and formed by a P-CVD process to improve moisture resistance.
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