Method of fabricating CMOS image sensor
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United States of America Patent
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-
Aug 26, 2008
Grant Date -
Jun 15, 2006
app pub date -
Oct 7, 2005
filing date -
Dec 14, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of fabricating a CMOS image sensor is disclosed that enhances device robustness. The method includes the steps of forming a metal pad on a pad area of a substrate, forming a planarizing layer on the substrate including the metal pad, removing a portion of the planarizing layer to open a surface of the metal pad, forming a protective layer over the substrate including the metal pad, coating a color filter resist layer on the protective layer and selectively exposing the color filter resist layer, coating a microlens resist layer on the color filter resist layer and selectively exposing the microlens resist layer, developing the exposed color filter and microlens resist layers, forming a pad opening by selectively removing the protective layer to open a surface of the metal, and reflowing the microlens pattern.
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