Method and structure for reducing noise in CMOS image sensors
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United States of America Patent
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Apr 5, 2011
Grant Date -
Sep 14, 2006
app pub date -
Mar 11, 2005
filing date -
Mar 11, 2005
priority date (Note) -
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Abstract
A method and device is disclosed for reducing noises in CMOS image sensors. An improved CMOS image sensor includes a light sensing structure surrounded by a support feature section. An active section of the light sensing structure is covered by no more than optically transparent materials. A light blocking portion includes a black light filter layer and an opaque layer covering the support feature section. The light blocking portion may also cover a peripheral portion of the light sensing structure. The method for forming the CMOS image sensors includes using film patterning and etching processes to selectively form the opaque layer where the light blocking portion is desired but not over the active section.
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