Infrared solid-state image pickup apparatus and a production method thereof
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United States of America Patent
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Oct 6, 2009
Grant Date -
Jul 20, 2006
app pub date -
Jan 12, 2006
filing date -
Jan 14, 2005
priority date (Note) -
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Abstract
An infrared solid-state image pickup apparatus includes an SOI substrate having a silicon oxide film layer and an SOI layer on a silicon substrate, a detecting portion which is provided with a PN junction diode formed on the SOI substrate and converts a temperature change generated by an incident infrared ray to an electric signal, and a support that holds the detecting portion with a space from the silicon substrate of the SOI substrate. An impurity in a semiconductor layer constituting the PN junction diode is distributed such that carriers flowing in the semiconductor layer are distributed in such an uneven manner as being much in a central portion of the semiconductor layer than in a peripheral portion thereof.
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