Buried silicon dioxide / silicon nitride bi-layer insulators and methods of fabricating the same
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United States of America Patent
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Jul 28, 2009
Grant Date -
Jul 19, 2007
app pub date -
Jan 18, 2006
filing date -
Jan 18, 2006
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Abstract
Embodiments of the present invention relate to the fabrication of a buried bi-layer insulator of silicon oxide and silicon nitride in a microelectronic substrate, and to the buried silicon oxide/silicon nitride bi-layer insulator itself. The buried silicon oxide/silicon nitride bi-layer insulator may be formed by implanting oxygen ions and nitrogen ions into the silicon-containing microelectronic substrate and then annealing the silicon-containing microelectronic substrate to form silicon oxide and silicon nitride layers therein.
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