Contact plug and method of formation
Number of patents in Portfolio can not be more than 2000
United States of America
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Apr 19, 2022
Grant Date -
Sep 5, 2019
app pub date -
Mar 1, 2018
filing date -
Mar 1, 2018
priority date (Note) -
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status (Latency Note)
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Abstract
A method of making a semiconductor device that includes forming a dielectric stack over a substrate and patterning a contact region in the dielectric stack, the contact region having side portions and a bottom portion that exposes the substrate. The method also includes forming a dielectric barrier layer in the contact region to cover the side portions and forming a conductive blocking layer to cover the dielectric barrier layer, the dielectric stack, and the bottom portion of the contact region. The method can include forming a conductive layer over the conductive blocking layer and forming a conductive barrier layer over the conductive layer. The method can further include forming a silicide region in the substrate beneath the conductive layer.
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