Formation of enhanced faceted raised source/drain EPI material for transistor devices

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10825897
APP PUB NO 20200243645A1
SERIAL NO

16262052

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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One illustrative method disclosed herein may include forming a first straight sidewall spacer adjacent a gate structure of a transistor, forming a recessed layer of sacrificial material adjacent the first straight sidewall spacer and forming a second straight sidewall spacer on a portion of the outer surface of the first straight sidewall spacer and above the recessed layer of sacrificial material. The method may also include removing the recessed layer of sacrificial material so as to expose a first vertical portion of the outer surface of the first straight sidewall spacer and forming an epi material on and above the substrate, wherein an edge of the epi material engages the first straight sidewall spacer.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hong, Wei Clifton Park, US 613 3790
Hu, Zhenyu Clifton Park, US 64 564
Jiang, Liu Clifton Park, US 15 18
Mulfinger, George R Gansevoort, US 24 51
Zang, Hui Guilderland, US 445 2175

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