SiC epitaxial wafer, production method therefor, and defect identification method

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United States of America

PATENT NO 11961736
APP PUB NO 20220259764A1
SERIAL NO

17683176

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Abstract

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A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H-SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm2, wherein a total density of large pit defects and triangular defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.01 defects/cm2 or more and 0.6 defects/cm2 or less. The large pit defect is a pit located on a surface at a position corresponding to a position of the carbon inclusion on the substrate surface, and a conversion rate from the substrate carbon inclusions to the large pit defects and the triangular defects caused by the substrate carbon inclusions is 20% or less. Also disclosed is a method for producing the SiC epitaxial wafer.

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Patent Owner(s)

  • RESONAC CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Guo, Ling Chichibu, JP 23 24
Kamei, Koji Chichibu, JP 48 373

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