Shallow trench isolation structure and method for forming the same

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United States of America Patent

PATENT NO 8525188
APP PUB NO 20120126245A1
SERIAL NO

13132068

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Abstract

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The invention provides a STI structure and method for forming the same. The STI structure includes a semiconductor substrate; a first trench embedded in the semiconductor substrate and filled up with a first dielectric layer; and a second trench formed on a top surface of the semiconductor substrate and interconnected with the first trench, wherein the second trench is filled up with a second dielectric layer, a top surface of the second dielectric layer is flushed with that of the semiconductor substrate, and the second trench has a width smaller than that of the first trench. The invention reduces dimension of divots and improves performance of the semiconductor device.

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Patent Owner(s)

  • INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liang, Qingqing Beijing, CN 167 2535
Yin, Haizhou New York, US 243 2978
Zhong, Huicai Beijing, CN 108 1681

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