Reliable aluminum interconnect via structures
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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-
Oct 2, 2001
Issued Date -
N/A
app pub date -
Aug 13, 1998
filing date -
Jul 25, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Disclosed is an aluminum filled via hole for use in a semiconductor interconnect structure. The aluminum filled via hole of the semiconductor interconnect structure includes a first patterned metallization layer lying over a first dielectric layer. A second dielectric layer overlying the first patterned metallization layer and the first dielectric layer. An aluminum filled via hole defined through the second dielectric layer and in contact with the first patterned metallization layer. The aluminum filled via hole has an electromigration barrier cap over a topmost portion of the aluminum filled via hole that is substantially level with the second dielectric layer. The electromigration barrier cap having a thickness of between about 500 angstroms and about 2,500 angstroms.
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