Self adapting iterative read calibration to retrieve data from memory cells

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United States of America Patent

PATENT NO 11403042
APP PUB NO 20210311668A1
SERIAL NO

17350425

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Abstract

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A memory sub-system configured to iterative calibrate read voltages, where higher read voltages are calibrated based on the calibration results of lower read voltages. For example, a memory device initially determines first read voltages of a group of memory cells. The memory device calculates a second read voltage optimized to read the group of memory cells according to first signal and noise characteristics measured based on at least one of the first read voltages. A third read voltage is estimated based on an offset of the second read voltage from a corresponding voltage among the first read voltages. Second signal and noise characteristics of the group of memory cells are measured based on the third read voltage. The memory device then calculates a fourth read voltage optimized to read the group of memory cells according to the second signal and noise characteristics.

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Patent Owner(s)

  • MICRON TECHNOLOGY INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Alhussien, AbdelHakim S San Jose, US 69 847
Fitzpatrick, James Laguna Niguel, US 129 1889
Khayat, Patrick Robert San Diego, US 50 250
Parthasarathy, Sivagnanam Carlsbad, US 225 1009

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