Method for manufacturing semiconductor elemental device
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United States of America Patent
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Feb 6, 2007
Grant Date -
Aug 10, 2006
app pub date -
Feb 8, 2006
filing date -
Feb 8, 2005
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Abstract
The present invention provides a method for manufacturing a semiconductor elemental device wherein a first gate oxide film and a second gate oxide film thicker than the first gate oxide film are formed on a substrate provided with a device forming region comprised of silicon, comprising the steps of implanting an element for promoting a forming speed of each gate oxide film into a region for forming the second gate oxide film of the substrate; and simultaneously forming the first gate oxide film and the second gate oxide film by a thermal oxidation method, wherein in the element implanting step, the element is implanted in space of a depth equal to half the thickness of the second gate oxide film placed in predetermination of its formation from the surface of the substrate in such a manner that with the peak of a concentration distribution of the element as the center, a concentration distribution in which both sides of the peak is given twice as large as a standard deviation of the concentration distribution, is taken.
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- 15 United States
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Patent Owner(s)
- OKI SEMICONDUCTOR CO., LTD.
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Kishiro, Koichi | Tokyo, JP | 11 | 52 |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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