Insulated gate semiconductor device using compound semiconductor at the channel
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 30, 1991
Grant Date -
N/A
app pub date -
Apr 11, 1988
filing date -
Apr 9, 1987
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An insulated gate semiconductor device comprises a channel region of compound semiconductor of one conductivity type, source and drain regions of the other conductivity type spaced apart by the channel region, a gate insulation film provided on the channel region, a gate electrode provided on the insulating film and a silicon monocrystal thin film having a thickness of 100 atoms or less inserted between the channel region and the gate insulation film.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully