Ion source, method of operating the same, and ion source system

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6844556
APP PUB NO 20030218429A1
SERIAL NO

10442283

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Abstract

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In an ion source, within a support body which supports a plasma production chamber for producing a plasma on the basis of an ion source flange, a cavity is provided ranging from a position near the plasma production chamber to a position near the ion source flange. The cavity serves as a cooling medium passage which introduces a cooling medium to a position near the plasma production chamber to cool the plasma production chamber. The plasma production chamber is cooled at a position very near it by the cooling medium. Therefore, temperature of the plasma production chamber at the time of plasma production is kept at low temperatures.

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Patent Owner(s)

  • NISSIN ION EQUIPMENT CO., LTD.;NISSIN ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kinoyama, Toshiaki Kyoto, JP 1 5

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