Semiconductor device, method of manufacturing three-dimensional stacking type semiconductor device, circuit board, and electronic instrument

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United States of America Patent

PATENT NO 7141493
SERIAL NO

10799621

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Abstract

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A semiconductor device has a substrate and an electrode layer formed on the substrate, and the electrode layer includes a plurality of conductive layers and an insulating layer which are stacked, the insulating layer being interposed between two of the conductive layers adjacent each other, a through-hole being formed in each of the conductive layers lower than an uppermost conductive layer among the conductive layers, and the through-hole being filled with an insulating material.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Masuda, Kazuhiro Suwa-gun, JP 32 260

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