Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
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United States of America Patent
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Mar 13, 1990
Issued Date -
N/A
app pub date -
Oct 30, 1987
filing date -
Mar 19, 1985
priority date (Note) -
Expired
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Abstract
A method is provided for creating multilayer patterned films wherein at least one layer is an etch-resistant patterned layer, and wherein either positive or negative tone patterns can be obtained. The etch-resistant patterned layer is obtained by reacting a patterned polymeric film containing reactive functional groups with an organometallic reagent such as a silicon-containing compound. The pattern is subsequently transferred through adjacent polymeric layers using an oxygen plasma or equivalent dry-etch method.
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