Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
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United States of America Patent
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Jun 28, 2011
Grant Date -
Nov 19, 2009
app pub date -
Mar 20, 2009
filing date -
Mar 27, 2001
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Abstract
A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
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