Abrupt “delta-like” doping in Si and SiGe films by UHV-CVD
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United States of America Patent
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Mar 15, 2011
Grant Date -
Aug 31, 2006
app pub date -
Apr 28, 2006
filing date -
Jun 30, 1997
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Abstract
P atoms/cc. Alternatively, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.
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