Methods and systems for programmable memory using silicided poly-silicon fuses
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United States of America Patent
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Sep 28, 2004
Grant Date -
Mar 4, 2004
app pub date -
Jan 31, 2003
filing date -
Apr 4, 2002
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Abstract
The present invention is directed to methods and systems for evaluating one-time programmable memory cells. A threshold current is applied to a resistive circuit, thereby generating a threshold voltage. A read current is applied to a first memory cell, thereby generating a memory cell voltage. The memory cell voltage is compared to the threshold voltage, thereby determining the state of the memory cell. In a further embodiment of the invention, a second threshold voltage is generated and compared the memory cell voltage, thereby verifying the state of the memory cell. The threshold current is optionally a substantial replica of said read current. The threshold current is optionally a proportional substantial replica of said read current. In an embodiment, the resistive circuit includes a second memory cell, which can be programmed or unprogrammed. The second memory cell is optionally arranged to average the memory cell resistance.
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