Group-III nitride semiconductor device and method for fabricating the same

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United States of America Patent

PATENT NO 11335799
APP PUB NO 20200350427A1
SERIAL NO

16934419

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The present application discloses a group-III nitride semiconductor device, which comprises a substrate, a buffer layer, a semiconductor stack structure, and a passivation film. The buffer layer is disposed on the substrate. The semiconductor stack structure is disposed on the buffer layer and comprises a gate, a source, and a drain. In addition, a gate insulating layer is disposed between the gate and the semiconductor stack structure for forming a HEMT. The passivation film covers the HEMT and includes a plurality of openings corresponding to the gate, the source, and the drain, respectively. The material of the passivation film is silicon oxynitride.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jiang, Wen-Jang Hsinchu, TW 53 685

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