Semiconductor storage device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11309320
APP PUB NO 20210005618A1
SERIAL NO

17025191

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Abstract

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A nonvolatile memory cell using vertical nanowire (VNW) FETs includes a program element of which a gate is connected to a word line, and a switch element that is provided between the program element and a bit line and of which a gate is connected to the word line. The program element and the switch element are each constituted by one or a plurality of VNW FETs, and these VNW FETs are arranged in a line in a first direction.

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Patent Owner(s)

  • SOCIONEXT INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yamada, Tomoyuki Yokohama, JP 84 424

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