Methods of forming semiconductor constructions
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United States of America Patent
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Jun 21, 2005
Grant Date -
Oct 2, 2003
app pub date -
Mar 26, 2002
filing date -
Mar 26, 2002
priority date (Note) -
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Abstract
The invention includes a method of forming a semiconductor construction. A semiconductor substrate is placed within a reaction chamber. The substrate comprises a center region and an edge region surrounding the center region. The substrate comprises openings within the center region, and openings within the edge region. While the substrate is within the reaction chamber, a layer of insulative material is formed across the substrate. The layer is thicker over the one of the center region and edge region than over the other of the center region and edge region. The layer is exposed to an etch which removes the insulative material faster from over the one or the center region and edge region than from over the other of the center region and edge region.
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