Semiconductor device
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United States of America Patent
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Sep 14, 2010
Issued Date -
N/A
app pub date -
Apr 3, 2008
filing date -
Apr 3, 2008
priority date (Note) -
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Abstract
A semiconductor device includes a first metal region, a plurality of vias, a plurality of second metal regions, a plurality of openings and a third metal region. The first metal region conducts source/drain current. The second metal regions are electrically connected to the first metal region through the vias for conducting the source/drain current, in which each of the second metal regions is disposed in a distance from the adjacent second metal regions. The third metal region is electrically connected to the second metal regions through the openings, in which the resistance of the third metal region is smaller than the resistances of the first metal region and the second metal regions.
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