Method for producing a single crystal from semiconductor material by the FZ method; device for carrying out the method and semiconductor silicon wafer

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United States of America Patent

PATENT NO 11788201
APP PUB NO 20210222319A1
SERIAL NO

17256138

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Abstract

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Single crystals of semiconductor material are produced by an FZ method, wherein a molten zone is created between a feed rod and a growing single crystal; the method involving

    melting feed rod material in a high frequency magnetic field of a first induction coil;crystallizing material of the molten zone on top of the growing single crystal;rotating the growing single crystal about an axis of rotation and changing the direction of rotation and the speed of rotation according to a predetermined pattern; andimposing an alternating magnetic field of a second induction coil on the molten zone, wherein the alternating magnetic field is not axisymmetric with respect to the axis of rotation of the growing single crystal.

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Patent Owner(s)

  • SILTRONIC AG

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Altmannshofer, Ludwig Lenggries, DE 12 24
Meisterernst, Goetz Mettenheim, DE 2 0
Ratnieks, Gundars Burghausen, DE 3 1
Zitzelsberger, Simon Neuoetting/Alzgern, DE 3 9

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