Metal interconnection with low resistance in a semiconductor device and a method of forming the same
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United States of America Patent
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Dec 30, 2003
Grant Date -
Nov 21, 2002
app pub date -
Apr 30, 2002
filing date -
May 18, 2001
priority date (Note) -
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Abstract
The present invention relates to metal interconnections for bit lines having a low resistance and an advanced morphology and a method of forming the same including: forming an inter-layer insulation film on a semiconductor substrate, the inter-layer insulation film containing a contact hole for the bit line; forming a plug within the contact hole; forming a barrier metal defined on the plug; and forming a bit line on the inter-layer insulation film.
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