Method of depositing a conductive niobium monoxide film for MOSFET gates
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United States of America Patent
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Nov 30, 2004
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app pub date -
Sep 30, 2003
filing date -
Sep 30, 2003
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Abstract
A method is provided to deposit niobium monoxide gates. An elemental metal target, or a composite niobium monoxide target is provided within a sputtering chamber. A substrate with gate dielectric, for example silicon dioxide or a high-k gate dielectric, is provided in the sputtering chamber. The sputtering power and oxygen partial pressure within the chamber is set to deposit a film comprising niobium monoxide, without excess amounts of elemental niobium, NbO.sub.2 insulator, or Nb.sub.2 O.sub.5 insulator. The deposition method may be incorporated into a standard CMOS fabrication process, or a replacement gate CMOS process.
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