Method for manufacturing backside-illuminated CMOS image sensor structure

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United States of America

PATENT NO 11264421
APP PUB NO 20200251510A1
SERIAL NO

16643566

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The present disclosure discloses a method for manufacturing a backside-illuminated CMOS image sensor structure, the method comprises: providing a silicon substrate which has been subjected to a frontside processing and a back thinning; forming grid-shaped deep trenchs on the back of the silicon substrate; forming an insulating layer on the inner wall surface of the deep trenchs to form a grid-shaped deep trenchs isolation structure; forming a diffusion barrier layer on the surface of the insulating layer; filling metal in the deep trenchs to form a grid-shaped composite structure in which the Metal grid is combined with the deep trenchs isolation structure.

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Patent Owner(s)

  • SHANGHAI IC R&D CENTER CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ge, Xingchen Shanghai, CN 1 2

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