Metal barrier integrity via use of a novel two step PVD-ALD deposition procedure
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 14, 2006
Issued Date -
N/A
app pub date -
Oct 30, 2002
filing date -
Oct 30, 2002
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of forming a barrier layer on the surface of an opening defined in a porous, low dielectric constant (low k), layer, has been developed. The method features the use of a two step deposition procedure using a physical vapor deposition (PVD), procedure to initially deposit a thin underlying, first component of the barrier layer, while an atomic layer deposition (ALD), procedure is then employed for deposition of an overlying second barrier layer component. The underlying, thin barrier layer component obtained via PVD procedures is comprised with the desired properties needed to interface the porous, low k layer, while the overlying barrier layer component obtained via ALD procedures exhibits excellent thickness uniformity.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully