Bipolar device and method of manufacturing the same including pre-treatment using germane gas
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United States of America Patent
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Aug 1, 2006
Grant Date -
Sep 30, 2004
app pub date -
Mar 5, 2004
filing date -
Mar 6, 2003
priority date (Note) -
Expired
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Abstract
A method of manufacturing a bipolar device including pre-treatment using germane gas and a bipolar device manufactured by the same. The method includes forming a single crystalline silicon layer for a base region on a collector region; and forming a polysilicon layer for an emitter region thereon. Here, before the polysilicon layer is formed, the single crystalline silicon layer is pre-treated using germane gas. Thus, an oxide layer is removed from the single crystalline silicon layer, and a germanium layer is formed on the single crystalline silicon layer, thus preventing Si-rearrangement.
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