Semiconductor device with superimposed poly-silicon plugs
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United States of America Patent
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Dec 19, 2006
Grant Date -
May 18, 2006
app pub date -
Nov 17, 2004
filing date -
Nov 17, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device includes a first insulating layer; a first poly-silicon plug formed in the first insulating layer; a second insulating layer, formed on the first insulating layer; and a second poly-silicon plug that is formed in the second insulating layer. At least one of the first and second insulating layers is made from non-doped silicate glass. The first and second poly-silicon plugs are electrically coupled to each other in a thickness direction. Preferably, both the first and second insulating layers are made from non-doped silicate glass.
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