Semiconductor device and method of manufacture
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United States of America Patent
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Nov 9, 2021
Grant Date -
Apr 2, 2020
app pub date -
Aug 22, 2019
filing date -
Sep 27, 2018
priority date (Note) -
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Abstract
A semiconductor device having an improved source/drain region profile and a method for forming the same are disclosed. In an embodiment, a method includes etching one or more semiconductor fins to form one or more recesses; and forming a source/drain region in the one ore more recesses, the forming the source/drain region including epitaxially growing a first semiconductor material in the one or more recesses at a temperature of 600° C. to 800° C., the first semiconductor material including doped silicon germanium; and conformally depositing a second semiconductor material over the first semiconductor material at a temperature of 300° C. to 600° C., the second semiconductor material including doped silicon germanium and having a different composition than the first semiconductor material.
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