System and method for forming a gate dielectric
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United States of America Patent
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May 12, 2009
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N/A
app pub date -
Oct 30, 2007
filing date -
Jun 14, 2002
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Expired
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Abstract
in a process zone surrounding the wafer after the forming. The method also includes pre-treating the HF-last surface using an in-situ steam generation process, forming the stack on the pre-treated surface, and annealing the wafer after the forming. The pre-treating includes providing an inert gas flow in a process zone surrounding the HF-last surface, reacting hydrogen with an oxidizer in the process zone for a very short duration, and providing an inert gas flew in the process zone after the reacting.
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